A new type of transistor is in the works inside a US campus laboratory. It is resilient and super-fast but, for now, it is still a work in progress.

A new transistor in development inside a Massachusetts laboratory is said to be extremely tough and resilient and offer super-fast switching, while meeting - or even exceeding - industry standards.

Researchers at MIT first announced the transistor's development in 2021 when they published the results of their study which explored the use of an ultra-thin ferroelectric material made from boron nitride. At that time the report was carried in the journal, Science, researchers wrote only of the possibilities.

Now it is a reality. Working inside the laboratory, the scientists created that faster, more energy-efficient transistor and they claim that even after 100 billion switches, there are no signs of degradation. Researchers told Popular Mechanics magazine that, for electronic devices such as computers, this eliminates the need for selective storage on a chip. Scientists also say that boron nitride has another advantage: it remains stable over long periods of time because its polarization can be reversed when there is an electric field.

The next reality - actually manufacturing it - could be a lot tougher. Scientists acknowledged that despite the great gains in this development, they still don't have a way to mass produce it.

More Report - https://www.sciencealert.com/radical-new-super-tough-transistor-could-revolutionize-electronics